Title :
Using surface charge analysis to characterize the radiation response of Si/SiO2 structures
Author :
Stacey, J.W. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Holmes, K.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
We show that a surface charge analyzer (SCA) can be used to measure the total-dose radiation response of oxide-semiconductor structures noninvasively. A comparison of SCA measured radiation-induced oxide-trap charge and interface-trap densities with values from conventional metal oxide semiconductor (MOS) and mercury probe C--V measurements shows good agreement up to the highest total doses considered here (1000 krad(SiO2)). The measured values of oxide-trap charge and interface-trap densities monotonically increase as total dose increases. Surface charge analysis has an advantage over the C--V measurement method because it does not require a direct gate contact for measurement. The SCA also does not require extra device fabrication or special test structures for measurement, circumventing the need for post-processing that could alter the charge trapping within a thermal oxide.
Keywords :
MIS structures; dosimetry; radiation effects; silicon; silicon compounds; surface charging; 1000 krad; Si-SiO2; Si/SiO2 structures; charge trapping; conventional metal oxide semiconductor; interface-trap densities; mercury probe C-V measurements; oxide-semiconductor structures; radiation effects; radiation response; radiation-induced oxide-trap charge; surface charge analysis; test structures; thermal oxide; total-dose radiation response; Charge measurement; Contacts; Current measurement; Density measurement; Electrodes; Fabrication; Pollution measurement; Probes; Surface contamination; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839259