Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials

Author

Comeau, Jonathan P. ; Sutton, Akil K. ; Haugerud, Becca M. ; Cressler, John D. ; Kuo, Wei-Min Lance ; Marshall, Paul W. ; Reed, Robert A. ; Karroy, Arjun ; Van Art, Roger

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3743

Lastpage

3747

Abstract

The proton tolerance of SiGe heterojunction bipolar transistors (HBTs) fabricated on a variety of substrate materials is investigated for the first time. The present SiGe HBT BiCMOS technology represents only the second commercially-available SiGe process to be reported for radiation effects. SiGe HBT dc and ac performance is compared for devices fabricated on silicon-on-insulator (SOI), low resistivity, and high resistivity silicon substrates, and all are found to be total dose tolerant to multi-Mrad radiation levels. We also compare these radiation results to those previously reported for other commercially-available SiGe technologies.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; proton effects; semiconductor heterojunctions; silicon-on-insulator; SOI; SiGe; SiGe HBT BiCMOS technology; SiGe HBT ac performance; SiGe HBT dc performance; SiGe heterojunction bipolar transistor fabrication; dose tolerant; high resistivity silicon substrates; low resistivity silicon substrates; multiMrad radiation levels; proton tolerance; radiation effects; silicon-on-insulator; substrate materials; BiCMOS integrated circuits; CMOS technology; Conductivity; Germanium silicon alloys; Heterojunction bipolar transistors; Protons; Silicon germanium; Silicon on insulator technology; Space technology; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839253

Filename

1369552