A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

Author

Koo, H.C. ; Yi, Hyunjung ; Song, J.D. ; Ko, J.B. ; Chang, Joonyeon ; Han, S.H.

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

41

Issue

10

fYear

2005

Firstpage

2589

Lastpage

2591

Abstract

A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.

Keywords

III-V semiconductors; aluminium compounds; ferromagnetic materials; gallium arsenide; heat treatment; spin polarised transport; two-dimensional electron gas; 2D electron gas system; GaAs; aluminum oxide layer; arsenic gas; ferromagnet; heat treatment; low transmission barrier; oxide barrier; semiconductor; spin injection barrier; Aluminum oxide; Electrons; Furnaces; Gallium arsenide; HEMTs; Insulation; Magnetic tunneling; Metal-insulator structures; Oxidation; Spin polarized transport; AlAs; aluminum oxide; furnace; low transmission barrier; spin injection;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2005.854798

Filename

1519057