DocumentCode :
1189897
Title :
Theory of tunneling magnetoresistance for epitaxial systems
Author :
Butler, W.H. ; Zhang, X.-G. ; Vutukuri, S. ; Chshiev, M. ; Schulthess, T.C.
Author_Institution :
Center for Mater. for Inf. Technol. (MINT), Alabama Univ., Tuscaloosa, AL, USA
Volume :
41
Issue :
10
fYear :
2005
Firstpage :
2645
Lastpage :
2648
Abstract :
The tunneling current for electrons tunneling between crystalline ferromagnetic electrodes through an epitaxial crystalline barrier can be calculated from first principles. These calculations show that the wave function symmetry can be exploited to achieve very high tunneling magnetoresistance. For the Fe(100)|MgO(100) |Fe(100) system, the calculated conductance is much higher and its decrease with MgO thickness is much slower than has been estimated using a simple free electron-barrier model.
Keywords :
crystal symmetry; electrodes; ferromagnetic materials; magnesium alloys; magnetic epitaxial layers; tunnelling magnetoresistance; wave functions; MgO; crystalline ferromagnetic electrodes; electron tunneling; epitaxial crystalline barrier; epitaxial systems; free electron-barrier model; magnesium oxide; tunneling magnetoresistance; wave function symmetry; Crystallization; Electric resistance; Electrodes; Electrons; Insulation; Iron; Semiconductor process modeling; Tunneling magnetoresistance; USA Councils; Wave functions; Co; Fe; MgO; cobalt; iron; magnesium oxide; magnetoresistance; symmetry; tunneling;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2005.854763
Filename :
1519075
Link To Document :
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