Title :
Theory of tunneling magnetoresistance for epitaxial systems
Author :
Butler, W.H. ; Zhang, X.-G. ; Vutukuri, S. ; Chshiev, M. ; Schulthess, T.C.
Author_Institution :
Center for Mater. for Inf. Technol. (MINT), Alabama Univ., Tuscaloosa, AL, USA
Abstract :
The tunneling current for electrons tunneling between crystalline ferromagnetic electrodes through an epitaxial crystalline barrier can be calculated from first principles. These calculations show that the wave function symmetry can be exploited to achieve very high tunneling magnetoresistance. For the Fe(100)|MgO(100) |Fe(100) system, the calculated conductance is much higher and its decrease with MgO thickness is much slower than has been estimated using a simple free electron-barrier model.
Keywords :
crystal symmetry; electrodes; ferromagnetic materials; magnesium alloys; magnetic epitaxial layers; tunnelling magnetoresistance; wave functions; MgO; crystalline ferromagnetic electrodes; electron tunneling; epitaxial crystalline barrier; epitaxial systems; free electron-barrier model; magnesium oxide; tunneling magnetoresistance; wave function symmetry; Crystallization; Electric resistance; Electrodes; Electrons; Insulation; Iron; Semiconductor process modeling; Tunneling magnetoresistance; USA Councils; Wave functions; Co; Fe; MgO; cobalt; iron; magnesium oxide; magnetoresistance; symmetry; tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.854763