Edge domain dependent pinning effect by stray field in patterned magnetic tunnel junction

Author

Shimomura, Naoharu ; Kishi, Tatsuya ; Yoshikawa, Masatoshi ; Kitagawa, Eiji ; Asao, Yoshiaki ; Hada, Hiromitsu ; Yoda, Hiroaki ; Tahara, Shuichi

Author_Institution

Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

41

Issue

10

fYear

2005

Firstpage

2652

Lastpage

2654

Abstract

The mechanism of pinning of domain walls in patterned magnetic tunnel junctions (MTJs) during magnetization switching was investigated. The stray field from the pinned layer localized in the edge domain causes this pinning effect. This pinning occurs only when the cell has C-type edge domains. The switching process is simulated by Landau-Lifshitz-Gilbert equation. It is also studied by fabricating the MTJ cells with a different pinned layer to examine the effect of the stray field from the pinned layer.

Keywords

magnetic domain walls; magnetic field effects; magnetic storage; magnetic tunnelling; magnetisation reversal; random-access storage; C-type edge domains; Landau-Lifshitz-Gilbert equation; MRAM; MTJ; domain dependent pinning effect; domain walls; edge domain; magnetization switching; magnetoresistance ratio; magnetoresistive random access memory; patterned magnetic tunnel junction; switching process; Equations; Laboratories; Magnetic domain walls; Magnetic field measurement; Magnetic tunneling; Magnetization reversal; National electric code; Random access memory; Research and development; Tunneling magnetoresistance; Magnetic tunnel junction (MTJ); magnetoresistance ratio (MR); magnetoresistive random access memory (MRAM);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2005.854938

Filename

1519077