Complete transient simulation of flash EEPROM devices

Author

Keeney, Stephen ; Bez, Roberto ; Cantarelli, Daniele ; Piccinini, Francesco ; Mathewson, Alan ; Ravazzi, Leonardo ; Lombardi, Claudio

Author_Institution

Univ. Coll. Cork, Ireland

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2750

Lastpage

2757

Abstract

A two-dimensional device simulator which allows the complete transient simulation of nonvolatile memories is presented. The simulator has been derived from HFIELDS and incorporates models to account for Fowler-Nordheim tunneling, hot electron injection through silicon dioxide, and band-to-band tunneling in silicon. The physical models have been verified by comparing simulations with measurements performed on suitable test structures where good agreement has been obtained. The tool has been used to investigate flash EEPROM device scaling and to evaluate a published scaling scenario

Keywords

EPROM; digital simulation; electronic engineering computing; hot carriers; semiconductor device models; semiconductor-insulator boundaries; transient response; tunnelling; Fowler-Nordheim tunneling; HFIELDS; SiO₂-Si; band-to-band tunneling; device scaling; flash EEPROM devices; hot electron injection; memory devices; nonvolatile memories; physical models; transient simulation; two-dimensional device simulator; Analytical models; Capacitance; Circuit simulation; EPROM; Nonvolatile memory; Numerical simulation; SPICE; Secondary generated hot electron injection; Testing; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168729

Filename

168729