DocumentCode :
1190017
Title :
Room-temperature stability study in silicon base magnetic tunneling transistor
Author :
Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Hsieh, L.C. ; Huang, D.R.
Author_Institution :
Lab. for Spintronics, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Volume :
41
Issue :
10
fYear :
2005
Firstpage :
2682
Lastpage :
2684
Abstract :
A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE=1.25±0.25 V with the transfer ratio (IC/IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.
Keywords :
magnetic moments; magnetic tunnelling; p-n junctions; silicon; tunnel transistors; Si; base resistor; common collector circuitry; emitter bias; magnetic moment; magnetic tunneling junction; magnetocurrent ratio; p-n junction; spin tunneling transistor; Electrons; Giant magnetoresistance; Magnetic tunneling; Physics; Resistors; Schottky barriers; Silicon; Stability; Temperature sensors; Tunneling magnetoresistance; Magnetic tunneling; p–n junction; stability; transistor;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2005.855293
Filename :
1519087
Link To Document :
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