Title :
Room-temperature stability study in silicon base magnetic tunneling transistor
Author :
Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Hsieh, L.C. ; Huang, D.R.
Author_Institution :
Lab. for Spintronics, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE=1.25±0.25 V with the transfer ratio (IC/IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.
Keywords :
magnetic moments; magnetic tunnelling; p-n junctions; silicon; tunnel transistors; Si; base resistor; common collector circuitry; emitter bias; magnetic moment; magnetic tunneling junction; magnetocurrent ratio; p-n junction; spin tunneling transistor; Electrons; Giant magnetoresistance; Magnetic tunneling; Physics; Resistors; Schottky barriers; Silicon; Stability; Temperature sensors; Tunneling magnetoresistance; Magnetic tunneling; p–n junction; stability; transistor;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.855293