Title :
Low threshold current density 1.3-μm strained-layer quantum-well lasers using n-type modulation doping
Author :
Yamamoto, T. ; Watanabe, T. ; Ide, S. ; Tanaka, I. ; Nobuhara, H. ; Wakao, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We have developed 1.3 μm n-type modulation-doped strained-layer quantum-well lasers. Modulation-doped lasers with long cavities (low threshold gain) exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 250 A/cm2 for 1500 μm long lasers with five quantum wells. The estimated threshold current density for an infinite cavity length was 38 A/m2/well. This is the lowest value for InGaAsP-InGaAsP and InGaAs-InGaAsP quantum well lasers to our knowledge.
Keywords :
current density; doping profiles; laser cavity resonators; laser transitions; semiconductor lasers; 1.3 micron; 1500 micron; InGaAs-InGaAsP; InGaAsP-InGaAsP; long cavities; low threshold current density; n-type modulation doping; strained-layer quantum-well lasers; Charge carrier density; Density measurement; Doping profiles; Electrons; Epitaxial layers; Indium phosphide; Optical modulation; Quantum well lasers; Silicon; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
