Title :
Characteristics of a new isolated p-well structure using thin epitaxy over the buried layer and trench isolation
Author :
Okazaki, Yukio ; Kobayashi, Toshi ; Konaka, Shinsuke ; Morimoto, Takashi ; Takahashi, Mitsutoshi ; Imai, Kazuo ; Kado, Yuichi
Author_Institution :
NTT Corp., Kanagawa, Japan
fDate :
12/1/1992 12:00:00 AM
Abstract :
An isolated p-well structure for deep-submicrometer BiCMOS LSIs is proposed. The structure consists of a retrograde p-well in an n-type thin epitaxial layer over an n+ buried layer, and trench isolation. Latchup characteristics in this CMOS structure and breakdown characteristics of the shallow p-well are studied on test devices. Excellent latchup immunity and sufficient voltage tolerance are obtained with a thin 1-μm epitaxial layer. A CMOS 1/8 dynamic-type frequency divider using this well structure functions properly up to 3.2 GHz at a 2-V supply voltage
Keywords :
BiCMOS integrated circuits; electric breakdown of solids; integrated circuit technology; large scale integration; 2 V; 3.2 GHz; BiCMOS; CMOS structure; breakdown characteristics; buried layer; deep submicron LSI; dynamic-type; frequency divider; isolated p-well structure; latchup immunity; n-type thin epitaxial layer; n+ buried layer; retrograde p-well; shallow p-well; trench isolation; voltage tolerance; BiCMOS integrated circuits; Breakdown voltage; CMOS logic circuits; CMOS technology; Circuit testing; Electric breakdown; Epitaxial growth; Epitaxial layers; Fabrication; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
