Title :
Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate
Author :
Shoji, H. ; Uchida, T. ; Kusunoki, T. ; Matsuda, M. ; Kurakake, H. ; Yamazaki, S. ; Nakajima, Kensuke ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A uniform In/sub 0.05/Ga/sub 0.95/As ternary substrate was grown by using liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material at a constant temperature, and InGaAs/InGaAsP strained single quantum well (SQW) lasers were fabricated on the substrate for the first time. The lasers lased at 1.03 μm and exhibited low threshold current density of 222 A/cm2 and excellent characteristic temperature of 221 K, showing that the ternary substrate has a sufficient quality for laser fabrication.
Keywords :
Debye temperature; III-V semiconductors; crystal growth from melt; current density; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; substrates; 1.03 mum; 221 K; GaAs source material; In/sub 0.05/Ga/sub 0.95/As ternary substrate; In/sub 0.25/Ga/sub 0.75/As/InGaAsP; InGaAs; InGaAs/InGaAsP strained single quantum well lasers; InGaAsP; characteristic temperature; constant temperature; laser fabrication; liquid encapsulated Czochralski technique; low threshold current density; strained SQW lasers; substrate; ternary substrate; Carrier confinement; Electrodes; Gallium arsenide; Optical buffering; Optical device fabrication; Particle beam optics; Quantum well lasers; Stimulated emission; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
