• DocumentCode
    1190101
  • Title

    Exchange bias and giant magnetoresistance in spin valves with Angström-scale antiferromagnetic Layers at 5 K

  • Author

    Perdue, K.L. ; Carey, M.J. ; Sparks, P.D. ; Eckert, J.C.

  • Author_Institution
    Dept. of Phys., Harvey Mudd Coll., Claremont, CA, USA
  • Volume
    41
  • Issue
    10
  • fYear
    2005
  • Firstpage
    2706
  • Lastpage
    2708
  • Abstract
    We have studied the effects on the exchange bias of decreasing the antiferromagnetic layer to the Angström-scale regime in order to shed light on the minimum required thickness of the antiferromagnet. We have deposited IrMn layers between 0.2 and 2 nm on spin valves and measured the exchange bias by examining hysteresis loops at 5 K using the giant magnetoresistance of the spin valves. The exchange bias persists for IrMn thicknesses down to 0.4 nm and has a maximum at 1.6 nm. Because the ultra-thin layers create an exchange field, the origin of at least one component of exchange biasing must have a similarly short length scale.
  • Keywords
    antiferromagnetism; exchange interactions (electron); giant magnetoresistance; iridium alloys; magnetic hysteresis; magnetic thin films; manganese alloys; spin valves; 5 K; Angstrom-scale; IrMn; antiferromagnetic layers; exchange bias; giant magnetoresistance; hysteresis loops; spin valves; Antiferromagnetic materials; Giant magnetoresistance; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Spin valves; Temperature distribution; Temperature measurement; Thickness measurement; USA Councils; Antiferromagnetic materials; giant magnetoresistance; interface magnetism;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2005.855224
  • Filename
    1519095