DocumentCode
1190101
Title
Exchange bias and giant magnetoresistance in spin valves with Angström-scale antiferromagnetic Layers at 5 K
Author
Perdue, K.L. ; Carey, M.J. ; Sparks, P.D. ; Eckert, J.C.
Author_Institution
Dept. of Phys., Harvey Mudd Coll., Claremont, CA, USA
Volume
41
Issue
10
fYear
2005
Firstpage
2706
Lastpage
2708
Abstract
We have studied the effects on the exchange bias of decreasing the antiferromagnetic layer to the Angström-scale regime in order to shed light on the minimum required thickness of the antiferromagnet. We have deposited IrMn layers between 0.2 and 2 nm on spin valves and measured the exchange bias by examining hysteresis loops at 5 K using the giant magnetoresistance of the spin valves. The exchange bias persists for IrMn thicknesses down to 0.4 nm and has a maximum at 1.6 nm. Because the ultra-thin layers create an exchange field, the origin of at least one component of exchange biasing must have a similarly short length scale.
Keywords
antiferromagnetism; exchange interactions (electron); giant magnetoresistance; iridium alloys; magnetic hysteresis; magnetic thin films; manganese alloys; spin valves; 5 K; Angstrom-scale; IrMn; antiferromagnetic layers; exchange bias; giant magnetoresistance; hysteresis loops; spin valves; Antiferromagnetic materials; Giant magnetoresistance; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Spin valves; Temperature distribution; Temperature measurement; Thickness measurement; USA Councils; Antiferromagnetic materials; giant magnetoresistance; interface magnetism;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2005.855224
Filename
1519095
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