Title :
Characteristics of amorphous-silicon distributed-threshold voltage transistors formed by ion implantation
Author :
Satoh, Tsutomu ; Sugiura, Osamu ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
12/1/1992 12:00:00 AM
Abstract :
Hot ion-implantation has been applied to threshold voltage control of amorphous-silicon thin-film transistors. A threshold voltage shift as large as 13 V has been achieved without deterioration of the field-effect mobility. The technique was also used to form distributed-threshold voltage transistors which have a microstructure inside the channel. It was verified that the off-characteristics were greatly improved
Keywords :
amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; ion implantation; silicon; thin film transistors; amorphous Si; distributed-threshold voltage transistors; field-effect mobility; hot implant; ion implantation; microstructure; thin-film transistors; threshold voltage control; threshold voltage shift; Doping; Implants; Ion implantation; Microstructure; Photonic band gap; Plasma temperature; Silicon compounds; Thin film transistors; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
