Title :
Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substrates
Author :
Endo, Yasushi ; Sato, Takanobu ; Takita, Ayumu ; Kawamura, Yoshio ; Yamamoto, Masahiko
Author_Institution :
Dept. of Mater. Sci. & Eng., Osaka Univ., Japan
Abstract :
We have studied magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on the Si substrates. Each magnetic state in Al0.93Cr0.07N and Al0.91Mn0.09N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al0.93Cr0.07N and Al0.91Mn0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 107μΩ·cm at RT. At 77 K, tunneling phenomena for the Al0.93Cr0.07N thin film and rectification for the Al0.91Mn0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hcp (0001).
Keywords :
aluminium alloys; chromium alloys; crystal structure; electrical resistivity; ferromagnetism; magnetic semiconductors; magnetic thin films; manganese alloys; superparamagnetism; Al0.91Mn0.09N; Al0.93Cr0.07N; Cr-AlN; Mn-AlN; Si; crystal structure; dilute magnetic semiconductor; electrical properties; electrical resistivities; magnetic properties; magnetic state; paramagnetic state; polycrystalline structure; rectification; room temperature ferromagnetism; superparamagnetic state; thin films; tunneling phenomena; Chromium; Electric resistance; Magnetic films; Magnetic properties; Paramagnetic materials; Semiconductivity; Semiconductor thin films; Substrates; Temperature; Transistors; Cr–AlN thin film; Mn–AlN thin film; dilute magnetic semiconductor; room temperature ferromagnetism;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.854686
