Title :
Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn)As
Author :
Chen, Y.F. ; Lee, W.N. ; Huang, J.H. ; Chin, T.S. ; Guo, X.J. ; Ku, H.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The effects of low-temperature (210°C-290°C) annealing on the microstructure, lattice constant, and magnetic properties of (In0.52Al0.48)0.91Mn0.09As grown by low-temperature molecular-beam epitaxy were studied. The results show that low-temperature annealing has little influence on the crystalline structure and interface quality of (In0.52Al0.48)0.91Mn0.09As epilayer. In contrast, both the lattice constant and Curie temperature of (In0.52Al0.48)0.91Mn0.09As are found to be strongly dependent on the annealing temperature. The lattice constant linearly decreases with increasing annealing temperature; while the Curie temperature increases with increasing annealing temperature up to 250°C, and then abruptly decreases upon further annealed at 270°C and 290°C.
Keywords :
Curie temperature; aluminium compounds; crystal microstructure; crystal structure; ferromagnetic materials; indium compounds; lattice constants; magnetic annealing; magnetic semiconductors; manganese compounds; molecular beam epitaxial growth; (In0.52Al0.48)0.9Mn0.09As; 210 to 290 C; AlAs; Curie temperature; InAs; MnAs; crystalline structure; diluted magnetic semiconductor; ferromagnetic semiconductor; interface quality; lattice constant; low-temperature annealing; magnetic properties; microstructure; molecular-beam epitaxy; spintronics; Annealing; Indium phosphide; Lattices; Magnetic properties; Magnetic semiconductors; Materials science and technology; Microstructure; Physics; Substrates; Temperature; (In, Al, Mn)As; Diluted magnetic semiconductor; low-temperature annealing; magnetic properties; spintronics;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.854687
