Title :
Full polarization insensitivity of a 20 Gb/s strained-MQW electroabsorption modulator
Author :
Devaux, F. ; Chelles, S. ; Ougazzaden, A. ; Mircea, A. ; Carre, M. ; Huet, Fabrice ; Sorel, A.C.Y. ; Kerdiles, J.F. ; Henry, M.
Author_Institution :
France Telecom, Bagneux, France
Abstract :
We report on a MQW electroabsorption modulator with tensile-strained wells. The device transmission is shown to be fully polarization insensitive, i.e. both in amplitude and phase. The modulation efficiency is over 20 GHz/V (bandwidth higher than 20 GHz and 1 V drive voltage) which is the highest figure of merit reported for any kind of polarization insensitive modulator. Full polarization independence is further demonstrated by 2.5 Gb/s transmission at 1.55 μm over 475 km of standard fiber without penalty at 10/sup -9/ BER whatever the polarization.
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; light polarisation; optical communication equipment; optical modulation; semiconductor quantum wells; 1 V; 1.55 mum; 2.5 Gbit/s; 20 GHz; 475 km; InGaAsP; device transmission; drive voltage; figure of merit; full polarization insensitivity; fully polarization insensitive; modulation efficiency; polarization insensitive modulator; standard fiber; strained-MQW electroabsorption modulator; tensile-strained wells; Bandwidth; Bit error rate; Bit rate; Low voltage; Optical fiber communication; Optical fiber polarization; Optical signal processing; Quantum well devices; Solitons; Telecommunications;
Journal_Title :
Photonics Technology Letters, IEEE
