Title :
Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment
Author :
Ahn, Geun Young ; Park, Seung-Iel ; Kim, Sam Jin ; Lee, Bo Wha ; Chul Sung Kim
Author_Institution :
Dept. of Phys., Kookmin Univ., Seoul, South Korea
Abstract :
Zn/sub 1-x/Fe/sub x/O (x=0.00,0.01,0.03,0.05,0.07, and 0.10) compounds were fabricated by the sol-gel method. The crystal structure and magnetic properties were investigated as a function of doped Fe concentration. Specifically, we have used hydrogen treatment for the control of phase separation. The X-ray diffraction patterns show that the wurzite structure of ZnO does not change for the doping range below x=0.07. Furthermore, we could not find any Fe cluster or phase separation in the X-ray diffraction patterns. The Fe-doped ZnO indicate ferromagnetic behaviors with the Curie temperature higher than room temperature. Then, the magnetic moment per Fe atom increased with increasing Fe concentration.
Keywords :
Curie temperature; X-ray diffraction; crystal structure; ferromagnetic materials; iron alloys; magnetic moments; magnetoelectronics; phase separation; semimagnetic semiconductors; sol-gel processing; zinc alloys; Curie temperature; X-ray diffraction patterns; ZnO:Fe; crystal structure; diluted magnetic semiconductor; ferromagnetic materials; ferromagnetic semiconductor; hydrogen treatment; magnetic moment; magnetic properties; materials preparation; phase separation; sol-gel method; spintronics; wurzite structure; Annealing; Hydrogen; Iron; Magnetic properties; Optical materials; Semiconductor device doping; Temperature; X-ray diffraction; X-ray scattering; Zinc oxide; Diluted magnetic semiconductor (DMS); ferromagnetic; hydrogen treatment; spintronics;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.854685
