Title :
Improved thermal stability of In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors with Al2O3 interfacial layer
Author :
Klockenbrink, R. ; Wehmann, H.-H. ; Schlachetzki, A.
Author_Institution :
Inst. fur Halbleitertechnik, Tech. Univ. Braunschweig, Germany
Abstract :
The thermal stability of In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors has been improved by using thin electron-beam evaporated Al2O3 interfacial layers of different thickness. The addition of the interfacial layer allows for an increase in anneal temperature from 250/spl deg/ to 350/spl deg/C with a four-fold dark current increase. Measurements of impulse responses at 1.3 μm showed, that the frequency behaviour is not adversely affected by the increased capacitance caused by oxide charges, since metal-semiconductor-metal photodetectors are carrier transit-time limited.
Keywords :
III-V semiconductors; capacitance; carrier mobility; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; stability; 1.3 mum; 250 to 350 C; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ interfacial layer; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors; anneal temperature; capacitance; carrier transit-time limited; dark current; frequency behaviour; impulse responses; oxide charges; thermal stability; thin electron-beam evaporated Al/sub 2/O/sub 3/ interfacial layers; Annealing; Dark current; Dielectric substrates; Indium gallium arsenide; Indium phosphide; Optical devices; Photodetectors; Plasma stability; Schottky barriers; Thermal stability;
Journal_Title :
Photonics Technology Letters, IEEE
