Title :
Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications
Author :
Chandrasekhar, S. ; Lunardi, L.M. ; Hamm, R.A. ; Qua, G.J.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We report a monolithic chip incorporating an eight channel p-i-n/HBT photoreceiver array designed for multichannel WDM applications. The p-i-n photodetectors are edge illuminated and centered at a 250 μm pitch for mating with either ribbon fiber connectors or waveguide demultiplexers. Each channel operates at 2.5 Gb/s with an electrical crosstalk of -20 dB between adjacent channels. The average sensitivity of each receiver in the array was measured to be (-20/spl plusmn/1) dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.5 μm.
Keywords :
bipolar integrated circuits; crosstalk; demultiplexing equipment; integrated optoelectronics; optical communication equipment; optical receivers; p-i-n photodiodes; photodetectors; sensitivity; wavelength division multiplexing; 2.5 Gbit/s; 250 mum; HBT photoreceiver array; WDM applications; average sensitivity; bit error rate; edge illuminated; eight-channel p-i-n/HBT monolithic receiver array; electrical crosstalk; monolithic chip; multichannel WDM applications; p-i-n photodetectors; ribbon fiber connectors; waveguide demultiplexers; Connectors; Detectors; FETs; Heterojunction bipolar transistors; Optoelectronic devices; P-n junctions; PIN photodiodes; Packaging; Photodetectors; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
