Title :
On the reverse blocking characteristics of Schottky power diodes
Author :
Tu, Shang-hui L. ; Baliga, B. Jayant
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
An analytical model for the reverse blocking characteristics of Schottky power diodes has been obtained by incorporating the impact ionization multiplication factor into the thermionic-emission reverse leakage current with field-dependent Schottky-barrier lowering. Excellent agreement has been found between calculated curves and measured data. This model allows the accurate calculation of the reverse-leakage current of Schottky diodes at high reverse voltage
Keywords :
Schottky-barrier diodes; impact ionisation; leakage currents; semiconductor device models; Schottky power diodes; analytical model; field-dependent Schottky-barrier lowering; impact ionization multiplication factor; reverse blocking characteristics; reverse leakage current; thermionic-emission; Analytical models; Equations; Impact ionization; Leakage current; Power system modeling; Schottky barriers; Schottky diodes; Semiconductor diodes; Virtual reality; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
