DocumentCode
119036
Title
Design and fabrication of integrated waveguide filter based on high-resistivity silicon
Author
Lin Du ; Shi Pu
Author_Institution
Kay Lab. for Wide Band-gap Semicond. Mater. & Devices of Minist. of Educ., Xidian Univ., Xi´an, China
fYear
2014
fDate
12-15 Aug. 2014
Firstpage
1407
Lastpage
1410
Abstract
A tri-cavity Chebyshev bandpass filter based on high resistivity silicon is proposed and manufactured at Ku-band. MEMS etching process is utilized to etch via-holes array on high resistivity silicon. A fabricated tri-cavity Chebyshev bandpass filter after being packaged exhibits an insertion loss of 3.7 dB with a 6.8% relative bandwidth at a center frequency of 16 GHz and the return loss is better than 15 dB in the passband.
Keywords
Chebyshev filters; band-pass filters; etching; microfabrication; silicon; substrate integrated waveguides; vias; waveguide filters; Ku-band; MEMS etching process; Si; frequency 16 GHz; high-resistivity silicon; insertion loss; integrated waveguide filter fabrication; tricavity Chebyshev bandpass filter; via-holes array; Band-pass filters; Conductivity; Electromagnetic waveguides; Microwave filters; Resonator filters; Silicon; Substrates; MEMS etching; high resistivity silicon; relative bandwidth; siw filter;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location
Chengdu
Type
conf
DOI
10.1109/ICEPT.2014.6922918
Filename
6922918
Link To Document