DocumentCode
1190448
Title
XPS and XMCD study of Fe3O4/GaAs interface
Author
Lu, Yongxiong ; Claydon, Jill S. ; Ahmad, Ehsan ; Xu, Yongbing ; Thompson, Sarah M. ; Wilson, Karen ; Van der Laan, Gerrit
Author_Institution
Spintronics Lab., Dept. of Electron., Univ. of York, UK
Volume
41
Issue
10
fYear
2005
Firstpage
2808
Lastpage
2810
Abstract
Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.
Keywords
X-ray absorption; X-ray photoelectron spectra; gallium arsenide; interface magnetism; iron alloys; magnetic circular dichroism; magnetic thin films; spin polarised transport; Fe3O4-GaAs; FeO; X-ray absorption spectroscopy; X-ray magnetic circular dichroism; X-ray photoelectron spectroscopy; XMCD; XPS; barrier; post-growth oxidation; spin injection; ultrathin films; Electromagnetic wave absorption; Gallium arsenide; Insulation; Iron; Magnetic films; Oxidation; Phase measurement; Spectroscopy; Spin polarized transport; Thickness measurement; Half-metallic Fe; XMCD; post-growth oxidation; spintronics;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2005.854834
Filename
1519129
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