Title :
In0.52Al0.48As/In0.53Ga0.47 As MSM photodetectors and HEMT´s grown by MOCVD on GaAs substrates
Author :
Hong, W.P. ; Bhat, Raj ; Nguyen, C. ; Koza, M. ; Caneau, C. ; Chang, G.K.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The authors report the first demonstration of In0.52Al 0.48As/In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors and high-electron-mobility transistors (HEMTs) grown on GaAs substrates by organometallic chemical vapor deposition. Both photodetectors and transistors showed no degradation in performance compared to devices simultaneously grown on InP substrates. The photodetectors exhibited a responsivity of 0.45 A/W and leakage current of 10 to 50 nA. The HEMTs with a gate length of 1.0 μm showed a transconductance as high as 250 mS/mm, and fT and fmax of 25 and 70 GHz, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; leakage currents; metal-semiconductor-metal structures; photodetectors; vapour phase epitaxial growth; 1 micron; 10 to 50 nA; 25 GHz; 250 mS; 70 GHz; GaAs substrates; HEMTs; In0.52Al0.48As-In0.53Ga0.47 As; MOCVD; MSM photodetectors; high-electron-mobility transistors; leakage current; metal-semiconductor-metal; organometallic chemical vapor deposition; Buffer layers; Fingers; Gallium arsenide; Gold; HEMTs; Indium phosphide; MOCVD; Optical films; Photodetectors; Schottky barriers;
Journal_Title :
Electron Devices, IEEE Transactions on
