DocumentCode :
1190574
Title :
Mechanism for domain expansion in MAMMOS
Author :
Herget, P. ; Schesinger, T.E. ; Stancil, D.D.
Author_Institution :
Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
41
Issue :
10
fYear :
2005
Firstpage :
2860
Lastpage :
2862
Abstract :
A magnetic amplifying magnetooptical system (MAMMOS) model was created which calculates the size of the expanded domains in the readout layer by computing the forces on the domain wall. Using the model, the ratio of nucleation coercivity to domain wall motion coercivity, Hc,n/Hc,m, was found to be an important factor governing the final expanded domain size in MAMMOS. Simulation results indicated that Hc,n/Hc,m>5 is needed for a good readout signal. Experiments measuring the nucleation coercivity in localized areas on a MAMMOS readout layer agree with the modeling results. In the experiments, a wafer was patterned with islands of magnetic material and the switching behavior was measured. For a MAMMOS film, the ratio of Hc,n/Hc,m was measured to be 13 on average in a 400 μm2 area.
Keywords :
coercive force; magnetic domain walls; magnetic materials; magnetic switching; magneto-optical recording; MAMMOS; domain wall motion; magnetic amplifying magnetooptical system; magnetic domain expansion; magnetic material; magnetooptic recording; nucleation coercivity; readout layer; switching behavior; Area measurement; Coercive force; Computational modeling; Magnetic domain walls; Magnetic domains; Magnetic films; Magnetic materials; Magnetic switching; Nuclear measurements; Semiconductor device modeling; Magnetic amplifying magnetooptical system; magnetic domain expansion; magnetooptic recording;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2005.854676
Filename :
1519142
Link To Document :
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