Title :
Distributed modeling of switching transients in GaAs MESFET´s
Author :
Akhtar, Salman ; Tiwari, Sandip
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The transient phenomena resulting from the application of a step bias at the gate electrode of a GaAs MESFET have been simulated using a two-dimensional model. Results emphasizing the effects of the displacement current in high-speed devices are presented. The causes of the delay are discussed for devices of different gate lengths, and the effects of the distributed gate capacitance and the related delay in the drain current characteristics are incorporated in an equivalent circuit model. Analytical expressions derived from large-signal analysis are shown to conform with the results of two-dimensional simulation, allowing for an implementation in simulators such as SPICE
Keywords :
III-V semiconductors; Schottky gate field effect transistors; capacitance; delays; digital simulation; equivalent circuits; gallium arsenide; semiconductor device models; switching; transient response; 2D simulation; GaAs; MESFET; SPICE; delay; displacement current; distributed gate capacitance; distributed modelling; drain current characteristics; equivalent circuit model; gate electrode; high-speed devices; large-signal analysis; step bias; switching transients; two-dimensional model; Analytical models; Capacitance; Circuit simulation; Delay effects; Distributed control; Electrodes; Equivalent circuits; Gallium arsenide; MESFETs; SPICE;
Journal_Title :
Electron Devices, IEEE Transactions on
