On-wafer calibration techniques and applications at V-band

There is considerable interest in HEMT MMIC applications operating at V-band and higher frequencies due to their low noise, high power, and high power efficiency capability. A quantitative investigation of calibration methods have been performed to study the effect of calibration techniques on V-band device measurements and model development. This work compares SOLT, LRM, and multi-line TRL calibrations relative to each other. The analysis is then applied to pseudomorphic InGaAs HEMT devices to provide useful information on the effect of calibration on small signal-intrinsic parameter extraction at V-band.<>