Title :
An analytical model for floating-gate MOSFET including the effects of the overlapping capacitance
Author :
Manku, T. ; Heasell, E.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
12/1/1992 12:00:00 AM
Abstract :
An analytical model for the current-voltage characteristics of a floating-gate MOSFET are developed. The effects of the overlapping capacitance are included. The model was tested on experimental data obtained from fabricated devices. Good agreement was observed between measurement results and the model
Keywords :
capacitance; insulated gate field effect transistors; semiconductor device models; I-V characteristics; MOSFET; analytical model; current-voltage characteristics; floating-gate; overlapping capacitance; Analytical models; Capacitance; Circuit simulation; Electrons; Gallium arsenide; MESFETs; MOSFET circuits; Nonvolatile memory; SPICE; Semiconductor devices;
Journal_Title :
Electron Devices, IEEE Transactions on
