DocumentCode
1190711
Title
An analytical model for floating-gate MOSFET including the effects of the overlapping capacitance
Author
Manku, T. ; Heasell, E.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
39
Issue
12
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
2821
Lastpage
2823
Abstract
An analytical model for the current-voltage characteristics of a floating-gate MOSFET are developed. The effects of the overlapping capacitance are included. The model was tested on experimental data obtained from fabricated devices. Good agreement was observed between measurement results and the model
Keywords
capacitance; insulated gate field effect transistors; semiconductor device models; I-V characteristics; MOSFET; analytical model; current-voltage characteristics; floating-gate; overlapping capacitance; Analytical models; Capacitance; Circuit simulation; Electrons; Gallium arsenide; MESFETs; MOSFET circuits; Nonvolatile memory; SPICE; Semiconductor devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.168737
Filename
168737
Link To Document