DocumentCode :
1190744
Title :
Hybrid MOS-bipolar transistor switching with profiled drive signal
Author :
Lazarus, M.J. ; Wilkes, J.
Author_Institution :
Sch. of Phys. & Mater., Lancaster Univ., UK
Volume :
41
Issue :
10
fYear :
1994
fDate :
10/1/1994 12:00:00 AM
Firstpage :
662
Lastpage :
665
Abstract :
A method for switching MOS-bipolar transistor hybrids has been developed, which improves the transition performance and minimises the base drive power requirements in a split Darlington configuration with low on-state voltage. The type of wave shaping of the input control signal, enables unusually small and high speed MOSFETs to drive exceptionally high base current pulses for fast turn-on of a bipolar power transistor. Since bipolar over-saturation is avoided, the turn-off is also improved
Keywords :
MOSFET circuits; bipolar transistor circuits; bipolar transistor switches; driver circuits; field effect transistor switches; power MOSFET; power bipolar transistors; power electronics; power semiconductor switches; switching circuits; bipolar power transistor; high base current pulses; high speed MOSFETs; hybrid MOS-bipolar transistor switching; profiled drive signal; split Darlington configuration; transistor hybrids; Bipolar transistors; Capacitance; Circuit testing; Driver circuits; Impedance; Low voltage; MOSFETs; Pulse shaping methods; Shape control; Switches;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.329726
Filename :
329726
Link To Document :
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