DocumentCode :
1190868
Title :
The behavior of pinned layers using a high-field transfer curve
Author :
Oh, Sangmun ; Nishioka, K. ; Umezaki, H. ; Tanaka, H. ; Seki, T. ; Sasaki, S. ; Ohtsu, T. ; Kataoka, K. ; Furusawa, K.
Author_Institution :
Central Res. Lab, Hitachi, Ltd, Yokohama, Japan
Volume :
41
Issue :
10
fYear :
2005
Firstpage :
2950
Lastpage :
2952
Abstract :
In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "Ej>Eu≫Ek(AP1) and Ek(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; Eu is the coupling energy constant between the antiferromagnetic layer and the AP1; Ej is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and Ek(AP1) and Ek(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.
Keywords :
antiferromagnetic materials; giant magnetoresistance; magnetic anisotropy; magnetic multilayers; magnetostriction; antiferromagnetic layer; compressive mechanical stress; coupling energy constant; giant magnetoresistive sensor; high-field transfer curve; magnetostriction; pinned layers; quasistatic tester; transfer curve measurements; uniaxial anisotropic energy constants; Anisotropic magnetoresistance; Antiferromagnetic materials; Couplings; Giant magnetoresistance; Magnetic anisotropy; Magnetic devices; Magnetostriction; Magnetostrictive devices; Perpendicular magnetic anisotropy; Stress; Anisotropic energy; antiferromagnet; giant magnetoresistive (GMR); high-field transfer curve; pinned layers; quasi-static tester;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2005.855323
Filename :
1519170
Link To Document :
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