Si permeable-base transistor realization using a MOS-compatible technology

Author

Letourneau, P. ; Vincent, G. ; Perret, P. ; Badoz, P.A. ; Rosencher, E.

Author_Institution

CNET-CNS, Meylan, France

Volume

10

Issue

12

fYear

1989

Firstpage

550

Lastpage

552

Abstract

Silicon permeable-base transistors (PBTs) fabricated using a process entirely compatible with MOS technologies are discussed. The critical lithography defining the metal-base grating is an optical lithography, which allows easy variable periodicity of the base grating, and therefore permits the realization of PBT with either normally-on or normally-off transistor characteristics. Because of the high current density achievable in these devices and the high degree of compatibility with MOS technologies, PBT is a possible alternative for BICMOS applications.<>

Keywords

BIMOS integrated circuits; bipolar transistors; elemental semiconductors; integrated circuit technology; photolithography; semiconductor technology; silicon; BICMOS applications; MOS-compatible technology; PBTs; Si; easy variable periodicity; fabrication; high current density; metal base grating photolithography; normally on transfer characteristics; normally-off transistor characteristics; optical lithography; permeable-base transistors; realization; semiconductors; BiCMOS integrated circuits; Current density; Gratings; Lattices; Lithography; Optical device fabrication; Optical films; Passivation; Sputter etching; Stimulated emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43136

Filename

43136