Title :
Design for Manufacturing With Emerging Nanolithography
Author :
Pan, David Z. ; Bei Yu ; Jhih-Rong Gao
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.
Keywords :
VLSI; design for manufacture; electron beam lithography; masks; nanolithography; nanopatterning; optimisation; ultraviolet lithography; VLSI physical design; design for manufacturing; double-multiple patterning lithography; electron beam lithography; extreme scaling; extreme ultraviolet lithography; mask synthesis; nanolithography; nanopatterning; process technology co-optimization; very large scale integration; Layout; Logic gates; Nanolithography; Pattern matching; Ultraviolet sources; Design for manufacturing; EUV lithography (EUVL); double patterning; e-beam lithography (EBL); multiple patterning; nanolithography; physical design;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2013.2276751