Title :
Development of ferroelectric RAM (FRAM) for mass production
Author :
Eshita, T. ; Wang, W. ; Nakamura, Kentaro ; Mihara, Satoshi ; Saito, Hiroshi ; Hikosaka, Y. ; Inoue, Ken ; Kawashima, S. ; Yamaguchi, Hitoshi ; Nomura, Keigo
Author_Institution :
Process Technol. Div., Fujitsu Semicond. Ltd., Kuwana, Japan
Abstract :
We have developed ferroelectric capacitor fabrication technique and a new sensing amplifier circuit to realize low-voltage and high-density FRAM. Improvement of IrO, top electrode near the ferroelectric interface successively lowers operation voltage. And our developed “Dual Reference Sensing Amplifier” enables to commercialize highly-reliable FRAM with memory density of 4Mb or larger.
Keywords :
amplifiers; electrodes; ferroelectric capacitors; iridium compounds; random-access storage; IrO; dual reference sensing amplifier; ferroelectric RAM; ferroelectric capacitor; ferroelectric interface; high-density FRAM; low-voltage FRAM; mass production; sensing amplifier circuit; storage capacity 4 Mbit; top electrode; Capacitors; Fabrication; Ferroelectric films; Nonvolatile memory; Random access memory; Sensors; Switches; FRAM; Feroelectric; IrO Dual Sensing; PZT;
Conference_Titel :
Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM), 2014 Joint IEEE International Symposium on the
Conference_Location :
State College, PA
DOI :
10.1109/ISAF.2014.6922970
