Development of ferroelectric RAM (FRAM) for mass production

Author

Eshita, T. ; Wang, W. ; Nakamura, Kentaro ; Mihara, Satoshi ; Saito, Hiroshi ; Hikosaka, Y. ; Inoue, Ken ; Kawashima, S. ; Yamaguchi, Hitoshi ; Nomura, Keigo

Author_Institution

Process Technol. Div., Fujitsu Semicond. Ltd., Kuwana, Japan

fYear

2014

fDate

12-16 May 2014

Firstpage

1

Lastpage

3

Abstract

We have developed ferroelectric capacitor fabrication technique and a new sensing amplifier circuit to realize low-voltage and high-density FRAM. Improvement of IrO, top electrode near the ferroelectric interface successively lowers operation voltage. And our developed “Dual Reference Sensing Amplifier” enables to commercialize highly-reliable FRAM with memory density of 4Mb or larger.

Keywords

amplifiers; electrodes; ferroelectric capacitors; iridium compounds; random-access storage; IrO; dual reference sensing amplifier; ferroelectric RAM; ferroelectric capacitor; ferroelectric interface; high-density FRAM; low-voltage FRAM; mass production; sensing amplifier circuit; storage capacity 4 Mbit; top electrode; Capacitors; Fabrication; Ferroelectric films; Nonvolatile memory; Random access memory; Sensors; Switches; FRAM; Feroelectric; IrO Dual Sensing; PZT;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM), 2014 Joint IEEE International Symposium on the

Conference_Location

State College, PA

Type

conf

DOI

10.1109/ISAF.2014.6922970

Filename

6922970