DocumentCode :
1191394
Title :
Bipolar - JFET - MOSFET negative resistance devices
Author :
Chua, Leon O. ; Yu, Juebang ; Yu, Youying
Volume :
32
Issue :
1
fYear :
1985
fDate :
1/1/1985 12:00:00 AM
Firstpage :
46
Lastpage :
61
Abstract :
A systematic method is given for generating negative-resistance circuits made of 2 transistors and linear positive resistors only. The 2 transistors may be bioolar ( n-p-n or p-n-p ), JFET ( n -channel or p-channel), MOSFET ( n -channel or p -channel), or their combinations. Since the circuits do not require an internal power supply, they are passive and can be integrated as a two-terminal device in monolithic form. Two algorithms are given for generating a negative-resistance device which exhibits either a type- N \\upsilon - i characteristic similar to that of a tunnel diode, or a type- S \\upsilon -i characteristic similar to that of a four-layered p-n-p-n diode. Hundreds of new and potentially useful negative resistance devices have been discovered. A selected catalog of many such prototype negative-resistance devices is included for future applications.
Keywords :
Bipolar transistors; JFETs; MOSFETs; Negative-resistance devices; Nonlinear circuits; Character generation; Electron tubes; MOSFET circuits; Mice; Physics; Power engineering and energy; Power supplies; Resistors; Semiconductor diodes; Solid state circuits;
fLanguage :
English
Journal_Title :
Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0098-4094
Type :
jour
DOI :
10.1109/TCS.1985.1085599
Filename :
1085599
Link To Document :
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