Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

Author

Adivarahan, V. ; Gaevski, M. ; Koudymov, A. ; Yang, J. ; Simin, G. ; Khan, M.Asif

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC

Volume

28

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

192

Lastpage

194

Abstract

We describe a novel AlGaN/InGaN/GaN metal-oxide-semiconductor double heterostructure field-effect transistor with peak drain current of 1.67 A/mm and 2-GHz RF power of 15 W/mm at a drain bias as low as 35 V. These high values of peak currents and high RF powers at relatively low drain bias resulted from an additional selective area doping of the access regions during the device fabrication. The RF-output power of 12.5 W/mm (at a drain bias of V_D=30 V) was stable within a 0.5-dB variations during a 100-h continuous-wave stress test

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor doping; 100 hrs; 2 GHz; 30 V; AlGaN-InGaN-GaN; continuous-wave stress test; device fabrication; metal-oxide-semiconductor double heterostructure field-effect transistor; selective area doping; Aluminum gallium nitride; Doping; Fabrication; Gallium nitride; HEMTs; Knee; MODFETs; Power generation; Radio frequency; Voltage; Double heterostructure field-effect transistors; GaN HEMT; GaN HFET; MOS; selective doping;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.891386

Filename

4114564