High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning

Author

Chiang, K.C. ; Cheng, C.H. ; Pan, H.C. ; Hsiao, C.N. ; Chou, C.P. ; Chin, Albert ; Hwang, H.L.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

28

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

235

Lastpage

237

Abstract

Using low-cost and high work-function Ni, a low leakage current of 5times10^-6 A/cm² at 125 degC is obtained in a high 25-fF/mum²-density SrTiO₃ metal-insulator-metal (MIM) capacitor processed at 400 degC. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall kappa value beyond previous laminate structure

Keywords

MIM devices; capacitors; elemental semiconductors; leakage currents; nickel; strontium compounds; tantalum compounds; 125 C; 400 C; Ni; SrTiO₃; TaN; high-temperature leakage improvement; leakage current; metal-insulator-metal capacitors; thermal leakage; work-function tuning; Capacitance; Dielectrics; Electrodes; Laminates; Leakage current; MIM capacitors; Plasma temperature; Radio frequency; Very large scale integration; Voltage; Capacitor; Ni; high temperature; metal–insulator–metal (MIM); thermal leakage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.891265

Filename

4114566