Comparison of On-The-Fly, DC $I_{d}$ – $V_{g}$ , and Single-Pulse Methods for Evaluating Thresho

Stress-induced degradation of the threshold voltage of high-kappa nMOSFETs measured by on-the-fly and single-pulse methods is investigated. It was found that the relaxation of the stress-induced threshold voltage (V_th) shift during stress interruption (sensing) time is primarily governed by the fast detrapping of charges trapped through the fast transient charging (FTC) process. Subtraction of the FTC contribution from the total stress time-dependent V_th shift provides a practical and convenient method for eliminating a major source of V_th relaxation, which results in identical lifetime estimations by the on-the-fly and pulsed methods