Measurement of nonlinear dielectric constants of Pb(Zr, Ti)O3 thin films for ferroelectric probe data storage technology

Ferroelectric single crystals have excellent characteristics for ferroelectric probe data storage. However, it is difficult to make practically-available single-crystal media with a large area, and development of thin-film recording media is required. In this study Pb(Zr, Ti)O₃(PZT) thin films are prepared and evaluated for this novel data storage technology. Nonlinear dielectric constants of the PZT films were studied in detail. The nonlinear dielectric constants of the PZT films with Zr/Ti = 52/48 was measured to be 50 aF/V under bias voltage application, which was approximately 70 times larger than that of LiTaO₃ single crystal.