Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

Author

Wu, Woei-Cherng ; Chao, Tien-Sheng ; Peng, Wu-Chin ; Yang, Wen-Luh ; Wang, Jer-Chyi ; Chen, Jian-Hao ; Lai, Chao-Sung ; Yang, Tsung-Yu ; Lee, Chien-Hsing ; Hsieh, Tsung-Min ; Liou, Jhyy Cheng

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu

Volume

28

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

214

Lastpage

216

Abstract

In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>10⁴) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application

Keywords

semiconductor device reliability; semiconductor storage; silicon compounds; 3.5 muA; WSG SONOS memory; drain disturbance; multilevel storage; polysilicon-oxide-nitride-oxide-silicon memory cells; reliability properties; source-side injection; unconsidered gate; wrapped select gate SONOS memory; Cameras; Chaos; Councils; Fabrication; Flash memory; Nonvolatile memory; SONOS devices; Silicon; Solid state circuits; Voltage; Multilevel operation; source-side injection; wrapped select gate (WSG) polysilicon–oxide–nitride–oxide–silicon (SONOS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.891301

Filename

4114588