DocumentCode
1191770
Title
A High-Speed Threshold Memory Element
Author
Gamblin, Rodger L. ; Tunis, Cyril J.
Author_Institution
IEEE
Issue
9
fYear
1968
Firstpage
893
Lastpage
894
Abstract
Abstract—This note describes a new analog-memory or variable- weight device that can be set to any of 100 stable states and switched between states in 100 ns or less. The device uses the coupling between a circularly polarized microwave signal (as generated by a helical structure) and a partially switched ferrite core.
Keywords
Index Terms—Adaptive logic device, analog memory, microwave read-out, threshold logic, threshold memory element.; Analog memory; Ferrites; Logic devices; Magnetic cores; Magnetization; Microwave devices; Permeability; Polarization; Switches; Transformer cores; Index Terms—Adaptive logic device, analog memory, microwave read-out, threshold logic, threshold memory element.;
fLanguage
English
Journal_Title
Computers, IEEE Transactions on
Publisher
ieee
ISSN
0018-9340
Type
jour
DOI
10.1109/TC.1968.229113
Filename
1687479
Link To Document