Analytical model of shot noise in double-barrier resonant-tunneling diodes

Author

Brown, Elliott R.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2686

Lastpage

2693

Abstract

The shot noise in double-barrier diodes is analyzed using the stationary-state approach to resonant tunneling through the first quasi-bound level. Significant deviations from full shot noise are predicted. Significant shot noise suppression occurs in the entire positive differential resistance region below the current peak, and shot noise enhancement occurs in the negative differential resistance region above the peak. The physical basis for these effects is assumed to be the modulation of the double-barrier transmission probability by charge stored in the first quasi-bound level in the quantum well. The analysis confirms microwave noise measurements of high-speed double-barrier diodes

Keywords

negative resistance; random noise; resonant tunnelling devices; semiconductor device models; semiconductor device noise; analytical model; double-barrier; modulation; negative differential resistance region; noise enhancement; noise suppression; positive differential resistance region; quantum well; quasi-bound level; resonant-tunneling diodes; shot noise; stationary-state; transmission probability; Acoustical engineering; Analytical models; Cathodes; Electrons; Fluctuations; Noise level; Resonant tunneling devices; Schottky diodes; Semiconductor device noise; Semiconductor diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168748

Filename

168748