Title :
Picometre displacement tracking of an optical beam in a silicon Schottky barrier sensor
Author_Institution :
Div. of Chem., California Inst. of Technol., Pasadena, CA
fDate :
10/27/1994 12:00:00 AM
Abstract :
An Ni-Si-Ni Schottky barrier sensor is used to sense 0.032 nm (0.064 nm peak-to-peak, 0.023 nm RMS) displacement of an optical beam incident on the sensor. This spatial resolution is more than two orders of magnitude better than any previously reported with a simple solid-state device and approaches interferometric levels
Keywords :
Schottky-barrier diodes; displacement measurement; elemental semiconductors; photodetectors; photodiodes; silicon; 0.032 nm; MSM photodiode; Ni-Si-Ni; optical beam; picometre displacement tracking; silicon Schottky barrier sensor; solid-state device; spatial resolution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941246
