DocumentCode
1191819
Title
0.5 V ultra-low power wideband LNA with forward body bias technique
Author
Liu, Jiangchuan ; Liao, Haitao ; Huang, R.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
Volume
45
Issue
6
fYear
2009
Firstpage
289
Lastpage
290
Abstract
An ultra-low power wideband CMOS low noise amplifier (LNA) fabricated in TSMC 0.18 mum RF CMOS process for sub 1 GHz applications is presented. The capacitive cross-coupled LNA with forward-body-bias (FBB) technique is adopted to achieve wideband input impedance matching and low power, low noise factor. The LNA is tested in the frequency range of 400-900 MHz, and exhibits a voltage gain of 18.5-20.7 dB, and a noise figure of 2.95 dB, drawing only 0.385 mW from 0.5 V power supply.
Keywords
CMOS analogue integrated circuits; broadband networks; impedance matching; low noise amplifiers; radiofrequency amplifiers; wideband amplifiers; CMOS low noise amplifier; RF CMOS; TSMC; forward body bias technique; forward-body-bias technique; frequency 400 MHz to 900 MHz; gain 18.5 dB to 20.7 dB; noise figure 2.95 dB; power 0.385 mW; size 0.18 mum; ultra-low power wideband LNA; voltage 0.5 V; wideband input impedance matching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.3150
Filename
4800371
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