A Low-Cost and Low-Power CMOS Receiver Front-End for MB-OFDM Ultra-Wideband Systems

Author

Ranjan, Mahim ; Larson, Lawrence E.

Author_Institution

Qualcomm Inc., San Diego, CA, USA

Volume

42

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

592

Lastpage

601

Abstract

This paper presents an RF receiver front-end for MB-OFDM-based ultra-wideband (UWB) systems. The receiver occupies only 0.35 mm² in a 0.18 mum CMOS process and consists of a low-noise amplifier, downconverter and a bandpass filter. There are no on-chip inductors and the receiver requires no off-chip matching components. The measured receiver gain is 21 dB, noise figure is less than 6.6 dB, input IIP₃ is -5.6 dBm, and the receiver consumes 19.5 mA from a 2.3 V supply. The receiver covers all the MB-OFDM bands from 3.1 to 8 GHz.

Keywords

CMOS analogue integrated circuits; OFDM modulation; low-power electronics; microwave receivers; multiplexing equipment; radio receivers; ultra wideband communication; 0.18 micron; 19.5 mA; 2.3 V; 21 dB; 3.1 to 8 GHz; CMOS receiver front-end; MB-OFDM; RF receiver; bandpass filter; downconverter; low-noise amplifier; ultra-wideband systems; Bandwidth; CMOS process; Degradation; Inductors; Jamming; Narrowband; OFDM; Radio frequency; Ultra wideband technology; Wireless communication; CMOS; OFDM; UWB; distortion; receiver; ultra wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.891725

Filename

4114761