• DocumentCode
    1191844
  • Title

    Deep high-dose erbium implantation of low-loss silicon oxynitride waveguides

  • Author

    Chelnokov, A.V. ; Lourtioz, J.-M. ; Boucaud, P. ; Bernas, H. ; Chaumont, J.

  • Author_Institution
    Inst. d´Electron. Fondamentale, Univ. de Paris-Sud, Orsay
  • Volume
    30
  • Issue
    22
  • fYear
    1994
  • fDate
    10/27/1994 12:00:00 AM
  • Firstpage
    1850
  • Lastpage
    1852
  • Abstract
    Photoluminescence studies of low-loss SiON waveguides deeply (2.8 MeV) implanted with erbium at concentrations up to 1 atm.% are reported. Rapid thermal annealing at 900°C is found to repair most of the implantation damage and results in a 5.3 ms 4I13/2 lifetime for 0.25 atm.% Er concentration. Measurements in 1 atm.% doped samples show significant erbium ion-ion interactions
  • Keywords
    annealing; erbium; integrated optics; ion implantation; optical waveguides; optical workshop techniques; photoluminescence; radiative lifetimes; rapid thermal processing; silicon compounds; 2.8 MeV; 900 C; SiON:Er; deep high-dose erbium implantation; doped samples; erbium ion-ion interactions; implantation damage; lifetime; low-loss silicon oxynitride waveguides; photoluminescence; rapid thermal annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941294
  • Filename
    329982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1191844