Title :
Deep high-dose erbium implantation of low-loss silicon oxynitride waveguides
Author :
Chelnokov, A.V. ; Lourtioz, J.-M. ; Boucaud, P. ; Bernas, H. ; Chaumont, J.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. de Paris-Sud, Orsay
fDate :
10/27/1994 12:00:00 AM
Abstract :
Photoluminescence studies of low-loss SiON waveguides deeply (2.8 MeV) implanted with erbium at concentrations up to 1 atm.% are reported. Rapid thermal annealing at 900°C is found to repair most of the implantation damage and results in a 5.3 ms 4I13/2 lifetime for 0.25 atm.% Er concentration. Measurements in 1 atm.% doped samples show significant erbium ion-ion interactions
Keywords :
annealing; erbium; integrated optics; ion implantation; optical waveguides; optical workshop techniques; photoluminescence; radiative lifetimes; rapid thermal processing; silicon compounds; 2.8 MeV; 900 C; SiON:Er; deep high-dose erbium implantation; doped samples; erbium ion-ion interactions; implantation damage; lifetime; low-loss silicon oxynitride waveguides; photoluminescence; rapid thermal annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941294
