90 nm TCAM cell design with leakage suppression technique

A leakage suppressed ternary content-addressable memory (TCAM) cell design is introduced, in which dasiadon´t care´ information is used to minimise the leakage power dissipated in the prefix CAM. The measurements based on 90 nm process technology show that without any performance penalty the design can deliver a leakage power reduction of 18%.