Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings

Author

Hofstetter, D. ; Zappe, H.P. ; Epler, J.E. ; Sochtig, J.

Author_Institution

Paul Scherrer Inst., Zurich

Volume

30

Issue

22

fYear

1994

fDate

10/27/1994 12:00:00 AM

Firstpage

1858

Lastpage

1859

Abstract

A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet and is intended for monolithically integrated interferometer applications

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; holographic gratings; integrated optics; laser modes; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor lasers; sputter etching; 20 mA; 5 mW; GaAs-AlGaAs; RIE; distributed Bragg reflector lasers; holographic exposure; holographically-defined recessed gratings; lateral mode; monolithically integrated interferometer applications; quantum well DBR laser; reactive ion etching; recessed waveguide; ridge waveguide; single longitudinal mode; single-growth-step fabrication; third order grating;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19941262

Filename

329987