Title :
Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films
Author :
Cao, Fei ; Wang, Yannan ; Liu, Deming
Author_Institution :
Coll. of Electron. Sci. & Eng., Jilin Univ., Changchun
Abstract :
Tantalum-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300degC. The influence of O2/Ar ratio on the structural, electrical, and optical properties of the as-deposited films is investigated. The lowest resistivity of 4.1times10-4 Omegacm is obtained from the film prepared at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.
Keywords :
II-VI semiconductors; electrical conductivity; electrical resistivity; glass; semiconductor doping; semiconductor thin films; sputter deposition; tantalum; wide band gap semiconductors; zinc compounds; O2/Ar ratio; ZnO:Ta; electrical properties; glass substrates; optical properties; optical transmittance; radio frequency sputtering; resistivity; structural properties; temperature 300 C; transparent conductive films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.3717
