Title :
Measurement and simulation of floating substrate effects on the intrinsic gate capacitance characteristics of SOI n-MOSFETs
Author_Institution :
Univ. Catholique de Louvain, Belgium
fDate :
5/7/1992 12:00:00 AM
Abstract :
The theoretical foundation of unique floating substrate effects, which have been observed experimentally, on the intrinsic gate capacitance characteristics in saturation of SOI N-MOSFETs, is clearly established using original two-dimensional numerical device simulations.
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI n-MOSFETs; floating substrate effects; intrinsic gate capacitance; two-dimensional numerical device simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920614
