Title :
Gunn effect and high-injection phenomenon in heterojunction bipolar transistors
Author :
Posse, V.A. ; Jalali, Bahram
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fDate :
10/27/1994 12:00:00 AM
Abstract :
The transferred-electron effect in the collector region of heterojunction bipolar transistors is investigated. Conditions necessary for observation of Gunn instabilities are analysed and it is shown that stability of the conventional III-V HBT is ensured by the Kirk effect which occurs at a similar threshold current density as the Gunn effect
Keywords :
Gunn effect; current density; heterojunction bipolar transistors; stability; Gunn effect; Gunn instabilities; III-V HBT; Kirk effect; collector region; heterojunction bipolar transistors; high-injection phenomenon; stability; threshold current density; transferred-electron effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941269
