Title :
Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates
Author :
Shono, M. ; Hamada, Hiroyuki ; Honda, Shogo ; Hiroyama, R. ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution :
Sanyo Electr. Co., Osaka, Japan
fDate :
5/7/1992 12:00:00 AM
Abstract :
Low-threshold AlGaInP ( lambda L=635.6 nm) multiquantum-well laser diodes have been successfully fabricated by MOCVD using
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 20 degC; 350 micron; 5 micron; 57 mA; 630 to 635.6 nm; AlGaInP; GaAs; MOCVD; cavity length; laser diodes; misoriented substrates; multiquantum-well; semiconductor lasers; stripe width; threshold current; transverse-mode stabilised;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920574
