Title :
Annealing-induced Fe oxide nanostructures on GaAs
Author :
Lu, Yongxiong ; Ahmad, Ehsan ; Xu, Yongbing ; Thompson, Sarah M.
Author_Institution :
Dept. of Electron., York Univ., UK
Abstract :
We report the evolution of Fe oxide nanostructures on GaAs(100) upon preand post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy. These nanostripes exhibited uniaxial magnetic anisotropy. The formation of these nanostructures is attributed to surface anisotropy, which in addition could explain the observed uniaxial magnetic anisotropy.
Keywords :
III-V semiconductors; annealing; etching; ferromagnetic materials; gallium arsenide; iron; magnetic anisotropy; magnetoelectronics; nanostructured materials; scanning electron microscopy; 8 nm; Fe; GaAs; annealing; epitaxial growth; gradient temperature method; nanoscale pyramids; nanostripes; scanning electron microscopy; surface anisotropy; transmission and reflection high energy electron diffraction; uniaxial magnetic anisotropy; wet etching; Annealing; Electrons; Gallium arsenide; Iron; Magnetic anisotropy; Magnetic films; Nanostructures; Optical films; Temperature; Wet etching; Annealing; magnetic Fe oxide; magnetic uniaxial anisotropy; nanostructures;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.855202
